1050***

620**

100

HY3610P

HY3610P

2

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TA=25°C Unless Otherwise Noted)

VDSS

Drain-Source Voltage

100

VGSS

Gate-Source Voltage

±25

V

TJ

Maximum Junction Temperature

175

°C

TSTG

Storage Temperature Range

-55 to 175

°C

IS

Diode Continuous Forward Current

TC=25°C

160

A

Mounted on Large Heat Sink

IDM

TC=25°C

A

TC=25°C

160

ID

Continuous Drain Current

TC=100°C

118

A

TC=25°C

380

PD

Maximum Power Dissipation

TC=100°C

190

W

RθJC

Thermal Resistance-Junction to Case

0.39

RθJA

Thermal Resistance-Junction to Ambient

62.5

°C/W

Avalanche Ratings

EAS

Avalanche Energy, Single Pulsed

L=0.5mH

mJ

Electrical Characteristics (T

A = 25°C Unless Otherwise Noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

110

-

V

VDS=100V, VGS=0V

-

-

1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-

-

10

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

2.0

3.0

4.0

V

IGSS

Gate Leakage Current

VGS=±25V, VDS=0V

-

-

±100

nA

RDS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=80A

-

4.5

5.5

m

Ω

Diode Characteristics

VSD

Diode Forward Voltage

ISD=80A, VGS=0V

-

0.8

1

V

trr

Reverse Recovery Time

-

65

-

ns

Qrr

Reverse Recovery Charge

ISD=80A, dlSD/dt=100A/

µs

-

103

-

nC

www.hooyi-semi.com

Note：

** Drain current is limited by junction temperature

*** VD=80V

*

Repetitive rating ; pulse width limiited by junction temperature

Pulsed Drain Current *

*

*