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HT36 数据表(PDF) 4 Page - HOOYI SEMICONDUCTOR |
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HT36 数据表(HTML) 4 Page - HOOYI SEMICONDUCTOR |
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4 / 10 page ![]() 0 4 Typical Operating Characteristics Power Dissipation Tj - Junction Temperature (°C) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) 1E-4 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 1 2 Mounted on minimum pad R θJA :62.5 oC/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 0 20 40 60 80 100 120 140 160 180 200 0 80 160 240 320 400 480 T C =25 oC 0.01 0.1 1 10 100 500 1 10 100 1000 10ms 1ms 100us DC T C =25 oC 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 www.hooyi-semi.com 200 T C =25 oC,V G =10V limited by package HY3610P 1E-5 |
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