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HT36 数据表(PDF) 3 Page - HOOYI SEMICONDUCTOR |
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HT36 数据表(HTML) 3 Page - HOOYI SEMICONDUCTOR |
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3 / 10 page ![]() 57 - 40 HY3610P HY3610P 3 Electrical Characteristics (Cont.) (T A = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.3 - Ω Ciss Input Capacitance - 16200 - Coss Output Capacitance - 996 - Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz - 295 - pF td(ON) Turn-on Delay Time - 25 - Tr Turn-on Rise Time - td(OFF) Turn-off Delay Time - 85 - Tf Turn-off Fall Time VDD=50V, RG= 6 Ω, IDS =80A, VGS=10V, - 45 - ns Gate Charge Characteristics Qg Total Gate Charge - 201 - Qgs Gate-Source Charge - 49 - Qgd Gate-Drain Charge VDS=80V, VGS=10V, IDS=80A - - nC Note * : Pulse test ; pulse width ≤300 µs, duty cycle≤2%. . www.hooyi-semi.com |
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