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TS472 数据表(PDF) 6 Page - STMicroelectronics |
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TS472 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 25 page ![]() Electrical characteristics TS472 6/25 Doc ID 11015 Rev 6 3 Electrical characteristics Table 5. Electrical characteristics at VCC = 3 V with GND = 0 V, Tamb = 25° C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit en Equivalent input noise voltage density REQ =100 Ω at 1 kHz 10 THD+N Total harmonic distortion + noise 20 Hz ≤F ≤ 20 kHz, gain = 20 dB, Vin =50mVRMS 0.1 % Vin Input voltage, gain = 20 dB 10 70 mVRMS BW Bandwidth at -3 dB Bandwidth at -1 dB pin A3, B3 floating 40 20 kHz G Overall output voltage gain (Rgs variable): Minimum gain, Rgs infinite Maximum gain, Rgs = 0 -3 39.5 -1.5 41 0 42.5 dB Zin Input impedance referred to GND 80 100 120 k Ω RLOAD Resistive load 10 k Ω CLOAD Capacitive load 100 pF ICC Supply current, gain = 20 dB 1.8 2.4 mA ISTBY Standby current 1 μA PSRR Power supply rejection ratio, gain = 20 dB, F = 217 Hz, Vripple = 200 mVpp, inputs grounded Differential output Single-ended outputs, -70 -46 dB Table 6. Bias output: VCC = 3 V, GND = 0 V, Tamb = 25° C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Vout No load condition 1.9 2 2.1 V Rout Output resistance 80 100 120 W Iout Output bias current 2 mA PSRR Power supply rejection ratio, F = 217 Hz, Vripple = 200 mVpp 70 80 dB nV Hz ------------ |
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