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TS472 数据表(PDF) 16 Page - STMicroelectronics |
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TS472 数据表(HTML) 16 Page - STMicroelectronics |
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16 / 25 page ![]() Application information TS472 16/25 Doc ID 11015 Rev 6 Figure 37 gives other values of the gain vs. voltage applied on the GS pin. Figure 37. Gain vs. gain select voltage Note: In the case of a single-ended output configuration (either positive or negative output is used for the following signal processing) the overall gain is half. One must also take into account that all advantages of the differential configuration principles are lost (see the difference in PSRR in Table 5). 4.6 Wake-up time When the standby mode is released to switch the device to ON, a signal appears on the output a few microseconds later, and the bypass capacitor Cb is charged within a few milliseconds. As Cb is directly linked to the bias of the amplifier, the bias will not work properly until the Cb voltage is correct. In a typical application, when a biased microphone is connected to the differential input via the input capacitors (Cin), (and the output signal is in line with the specification), the wake-up time will depend upon the values of the input capacitors Cin and the gain. When the gain is lower than 0 dB, the wake-up time is determined only by the bypass capacitor Cb, as described above. For a gain superior to 0 dB, refer to Figure 38. Figure 38. Wake-up time in a typical application vs. input capacitors 0 0.2 0.4 0.6 0.8 4 5 -80 -60 -40 -20 0 20 40 Tamb=25 °C V GS (V) 20 40 60 80 100 0 10 20 30 40 50 60 Gain=20dB Tamb = 25°C Vcc=3V Cb=1 μF Input capacitors C IN (nF) Maximum Gain |
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