CB35000 datasheet(1/16 Pages) STMICROELECTRONICS

部件名	CB35000

功能描述	HCMOS STANDARD CELLS

PDF	16 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 16 page

CB35000 SERIES

HCMOS STANDARD CELLS

PRELIMINARY DATA

July 1995

1/16

®

FEATURES

s

0.5 micron triple layer metal HCMOS5S pro-

cess featuring retrograde well technology,

low resistance salicided active areas, polysi-

licide gates and thin metal oxide.

s

3.3 V optimized transistor with 5 V I/O inter-

face capability

s

2 - input NAND delay of 210 ps (typ) with

fanout = 2.

s

Broad I/O functionality including LVCMOS,

LVTTL, GTL, PECL, and LVDS.

s

High drive I/O; capability of sinking up to 48

mA with slew rate control, current spike sup-

pression and impedance matching.

s

Generators to support SPRAM, DPRAM,

ROM and MULT with BIST options.

s

Extensive embedded function library includ-

ing DSP and ST micros, popular third party

micros and Synopsys synthetic libraries.

Table 1

Module Generator Library

Cell

Description

SPRAM

256K bits max

16K word max 64 bit max

Zero static current

Tristate outputs

DPRAM

128K bits max

8K word max 64 bit max

Zero static current

Tristate outputs

ROM

2M bits max

32K word max 64 bit max

Diffusion programmable

Tristate outputs

MULT

Parallel asynchronous operation

2’s complement product

6 to 64 bits for both inputs

Ripple Carry or Fast Carry Look Ahead

s

Fully independent power and ground conﬁg-

urations for inputs, core and outputs.

s

I/O ring capability up to 800 pads.

s

Output buffers capable of driving ISA, EISA,

PCI, MCA, and SCSI interface levels.

s

Active pull up and pull down devices.

s

Buskeeper I/O functions.

s

Oscillators for wide frequency spectrum.

s

Broad range of 300 SSI cells.

s

Low Power / Low Drive library subset.

s

Design For Test includes IEEE 1149.1 JTAG

Boundary Scan architecture built in.

s

Cadence and Mentor based design system

with interfaces from multiple workstations.

s

Broad ceramic and plastic package range.

s

Latchup trigger current > +/- 500 mA.

ESD protection > +/- 4000 volts.

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