| 数据搜索系统,热门电子元器件搜索 |
|
L9924L 数据表(PDF) 39 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
L9924L 数据表(HTML) 39 Page - STMicroelectronics |
|
39 / 84 page ![]() DocID028840 Rev 3 39/84 L9924L Electrical specifications 83 4.3.15 Pin "LHC" This pin must be used in place of L pin, to connect the lamp when externals MOS are used to drive the lamp and the auxiliary load relay. It acts like the L pin, when the switch "Key" (see Figure 18) is closed (i.e. V(LHC)>VLHCHTh) the device exits stand-by condition. The presence of the key is detected in alarm condition by regulating the voltage on LHC pin to VLHCfault=1.26 V (typ.), when suggested external low-side MOS is biased at its typical current. The voltage of this pin is monitored respect to GND and A+/B+ in order to protect the external high side and low side MOS. When the external low side is turned on, if its drain (i.e. LHC) voltage becomes greater than VLHCLSx respect to GND the external power is switched off and bit 0 of SPI read register 0x12 is set [12.4.6]. When the external high side is turned on, if its drain (i.e. A+/B+) voltage becomes greater than VLHCHSx respect to LHC the external power is switched off and bit 1 of SPI read register 0x12 is set [12.4.6]. VLHCLSx and VLHCHSx thresholds can be selected by means of bits 0 and 1 of SPI write register 0x09 [12.4.17]. These diagnostic functions take place when GLS voltage with respect to GND is higher than VGLSTh parameter for low side MOS and when GHS voltage with respect to LHC is higher than VGHsTh parameter for high side MOS. Table 24. Electrical characteristics pin "LHC" # Symbol Parameter Test Condition Min. Typ. Max. Unit 1ILHCpulldw Pull down current Reg(0x09.2) = b0 Reg(0x09.7) = b0 I(LHC) > 0 @ V(LHC) = 0.7 V ILHCpulldw=ILHCpulldw,weak + ILHCpulldw,strong=-ILHCpullup + I(LHC) -1 - mA 2ILHCpulldw,weak Weak pull-down current Reg(0x09.2) = b0 Reg(0x09.7) = b1 I(LHC) < 0 @ V(LHC) = 0.7 V ILHCpulldw,weak=-ILHCpullup + I(LHC) -50 - µA 3ILHCpullup Pull-up current Reg(0x09.3) = b0 ILHCpullup=I(LHC)<0 @ V(LHC)=V(GND) Current from HS driver injected into LHC pin -400 - - µA 4VLHCfault LHC alarm voltage External low-side PowerMOS: VND5N07 I(D)=IDtyp -1.26 - V 5VLHCHTh High Voltage Threshold key-on detector -0.8 0.9 1.0 V 6VLHCLTh Low Voltage Threshold key-on detector -0.7 0.8 0.9 V 7TLHCdelay Turn-on delay time -- - 100 µs |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |