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EF9345 数据表(PDF) 4 Page - STMicroelectronics |
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EF9345 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 38 page ![]() ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC* Supply Voltage -0.3, 7.0 V Vin* Input Voltage -0.3, 7.0 V TA Operating Temperature 0, +70 oC Tstg Storage Temperature -55, +150 oC PDm Maximum Power Dissipation 0.75 W * With respect to Vss. Stresses above those hereby listed may cause permanent damage to the device. The ratings are stress ones only and functional operation of the device at these or any conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect reliability. Standard MOS circuits handling procedure should be used to avoid possible damage to the device. ELECTRICAL CHARACTERISTICS VCC = 5.0V ±5%, VSS =0V, TA = 0 to +70°C, unless otherwise specified. Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 4.75 5 5.25 V VIL Input Low Voltage -0.3 0.8 V VIH Input High Voltage : CLK Other Inputs 2.2 2 VCC VCC V IIN Input Leakage Current 10 µA VOH Output High Voltage (Iload = -500 µA) 2.4 V VOL Output Low Voltage : Iload = 4mA ; AD(0:7), ADM(0:7), AM(8:13) Iload = 1mA ; Other Outputs 0.4 0.4 V PD Power Dissipation 250 mW CIN Input Capacitance 15 pF ITSI Three State (Off State) Input Current 10 µA EF9345 4/38 |
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