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M41ST87YMX6F 数据表(PDF) 21 Page - STMicroelectronics

部件名 M41ST87YMX6F
功能描述  5.0 and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M41ST87YMX6F 数据表(HTML) 21 Page - STMicroelectronics

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2.6.6
Tamper detect sampling (TDS1 and TDS2)
This bit selects between a 1 Hz sampling rate or constant monitoring of the tamper input
pin(s) to detect a tamper event when the normally closed switch mode is selected. This
allows the user to reduce the current drain when the TEBX bit is enabled while the device is
in battery backup (see Table 5: "Tamper detection current (normally closed - TCMX = '0')"
and Figure 17: "Tamper detect sampling options"). Sampling is disabled if the TCMX bit is
set to logic '1' (Normally Open). In this case the state of the TDSX bit is a “Don’t care.”
Note: The crystal oscillator must be “on” for sampling to function. If the oscillator is stopped,
the tamper detect circuit will revert to continuous monitoring.
2.6.7
Tamper current high/tamper current low (TCHI/
������������������������������������������������1andTCHI/������������������������������������������������2)
This bit selects the strength of the internal pull-up or pull-down used during the sampling of
the normally closed condition. The state of the TCHI/
TCLO
X bit is a “Don’t care” for normally
open (TCMX = '1') mode (see Figure 18: "Tamper current options").
2.6.8
RAM clear (CLR1 and CLR2)
When either CLR1 or CLR2 and the TEBX bit are set to a logic '1,' the internal 128 bytes of
user RAM (see Figure 15: "Basic tamper detect options") will be cleared to all zeros in the
event of a tamper condition. Furthermore, the 128 bytes of user RAM will be deselected
(inaccessible) until the corresponding TEBX bit is reset to '0.' Any data read during this time
will be invalid. (ie. the cleared RAM values cannot be accessed.)
2.6.9
RAM clear external (CLR1EXT and CLR2EXT) - available in SOX28
package only
When either CLR1EXT or CLR2EXT is set to a logic '1' and the TEBX bit is also set to logic '1,'
the TPCLR signal will be asserted for clearing external RAM, and the RST output asserted
upon detection of a tamper event (see Figure 15: "Basic tamper detect options" and Figure
20: "RAM clear hardware hookup (SOX28 package only)").
Note: The reset output resulting from a tamper event will be the same as a reset resulting
from a power-down condition, a watchdog time-out, or a manual reset (
RSTIN1orRSTIN2);
the
RSToutputwillbeassertedfort
rec seconds.
This is accomplished by forcing TPCLR high, which if used to control the inhibit pin of the DC
regulator (see Figure 20: "RAM clear hardware hookup (SOX28 package only)") will also
switch off VOUT, depriving the external SRAM of power to the VCC pin. VOUT will
automatically be disconnected from the battery if the tamper occurs during battery back-up
(see Figure 19: "Tamper output timing (with CLR1EXT or CLR2EXT = '1') - available in
SOX28 package only"). By inhibiting the DC regulator, the user will also prevent other
inputs from sourcing current to the external SRAM, which would allow it to retain data
otherwise.
The user may optionally connect an inverting charge pump to the VCC pin of the external
SRAM (see Figure 20: "RAM clear hardware hookup (SOX28 package only)"). Depending
on the process technology used for the manufacturing of the external SRAM, clearing the
memory may require varying durations of negative potential on the VCC pin. This device
configuration will allow the user to program the time needed for their particular application.
Control Bits CLRPW0 and CLRPW1 determine the duration TPCLR will be enabled (see
Figure 19: "Tamper output timing (with CLR1EXT or CLR2EXT = '1') - available in SOX28
package only" and Table 6: "Tamper detect timing").
Note: When using the inverting charge pump, the user must also provide isolation in the
form of two additional small-signal power MOSFETs. These will isolate the VOUT pin from
both the negative voltage generated by the charge pump during a tamper condition, and



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