IS25LE01G-RILA3-TY datasheet(105/186 Pages) ISSI

105 / 186 page

IS25LE01G

IS25WE01G

Integrated Silicon Solution, Inc.- www.issi.com

105

Rev. A6

01/14/2025

8.24 ENTER DEEP POWER DOWN (DP, B9h)

The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (enter

into Power-down mode). During this mode, standby current is reduced from Isb1 to Isb2. While in the Power-down

mode, the device is not active and all Write/Program/Erase instructions are ignored. The instruction is initiated by

driving the CE# pin low and shifting the instruction code into the device. The CE# pin must be driven high after the

instruction has been latched, or Power-down mode will not engage. Once CE# pin driven high, the Power-down

mode will be entered within the time duration of tDP. While in the Power-down mode only the Release from Power-

down/RDID instruction, which restores the device to normal operation, will be recognized. All other instructions are

ignored, including the Read Status Register instruction which is always available during normal operation. Ignoring

all but one instruction makes the Power Down state a useful condition for securing maximum write protection. It is

available in both SPI and QPI mode.

Figure 8.55 Enter Deep Power Down Mode Sequence In SPI Mode

Instruction = B9h

CE #

SCK

Mode 3

Mode 0

tDP

High Impedance

Figure 8.56 Enter Deep Power Down Mode Sequence In QPI Mode

B9h

CE#

SCK

IO[3:0]

Mode 3

Mode 0

tDP

IS25LE01G-RILA3-TY 数据表(PDF) 105 Page - Integrated Silicon Solution, Inc