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IS25LE01G-RILA3-TY 数据表(PDF) 62 Page - Integrated Silicon Solution, Inc

部件名 IS25LE01G-RILA3-TY
功能描述  SERIAL FLASH MEMORY 133/104MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  186 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LE01G-RILA3-TY 数据表(HTML) 62 Page - Integrated Silicon Solution, Inc

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IS25LE01G
IS25WE01G
Integrated Silicon Solution, Inc.- www.issi.com
62
Rev. A6
01/14/2025
8.4 FAST READ OPERATION (FRD, 0Bh or 4FRD, 0Ch)
The Fast Read (FRD, 4FRD) instruction is used to read memory data at up to a 133MHz clock.
• 0Bh (EXTADD=0) is followed by a 3-byte address (A23-A0) or
• 0Bh (EXTADD=1) is followed by a 4-byte address (A31-A0) or
• 0Ch is followed by a 4-byte address (A31-A0)
The Fast Read instruction code is followed by three or four address bytes as above and dummy cycles
(configurable, default is 8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK.
Then the first data byte from the address is shifted out on the SO line, with each bit shifted out at a maximum
frequency fCT, during the falling edge of SCK.
The first byte addressed can be at any memory location. The address is automatically incremented by one after
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the
000000h address, allowing the entire memory to be read with a single Fast Read instruction. The Fast Read
instruction is terminated by driving CE# high (VIH).
If the Fast Read instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction
is ignored without affecting the current cycle.



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