IS25LE01G-RILA3-TY datasheet(131/186 Pages) ISSI

部件名	IS25LE01G-RILA3-TY

功能描述	SERIAL FLASH MEMORY 133/104MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC

PDF	186 Pages

Scroll/Zoom	100%

制造商	ISSI [Integrated Silicon Solution, Inc]

网页	http://www.issi.com

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131 / 186 page

IS25LE01G

IS25WE01G

Integrated Silicon Solution, Inc.- www.issi.com

131

Rev. A6

01/14/2025

Figure 8.87 FRDDTR Sequence (BDh [EXTADD=1] or BEh, 4-byte address)

CE #

SCK

IO0

IO1

Instruction = BDh/BEh

CE #

SCK

IO0

IO1

4-byte Address

High Impedance

...

Mode 3

Mode 0

30 28 26

7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1

4 Dummy Cycles

31 29 27

Data Out

...

6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0

Data Out

24 22 20

25 23 21

7 5

6 4

3 1

2 0

Mode Bits

...

Mode Bits

...

Notes:

If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode

bits are different from AXh, the device exits the AX read operation.

2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.

3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles

are same, then X should be Hi-Z.

IS25LE01G-RILA3-TY 数据表(PDF) 131 Page - Integrated Silicon Solution, Inc

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