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IS25LE01G-RILA3-TY 数据表(PDF) 176 Page - Integrated Silicon Solution, Inc

部件名 IS25LE01G-RILA3-TY
功能描述  SERIAL FLASH MEMORY 133/104MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  186 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LE01G-RILA3-TY 数据表(HTML) 176 Page - Integrated Silicon Solution, Inc

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IS25LE01G
IS25WE01G
Integrated Silicon Solution, Inc.- www.issi.com
176
Rev. A6
01/14/2025
9.3 DC CHARACTERISTICS
(Under operating range)
Symbol
Parameter
Condition
Min
Typ(2)
Max
Units
ICC1
VCC Active Read current
(3)
NORD
24
30
mA
FRD Single at 133MHz
31
38
FRD Dual at 133MHz
34
41
FRD Quad at 133MHz
40
48
FRD Single at 104MHz
28
35
FRD Dual at 104MHz
31
38
FRD Quad at 104MHz
35
42
FRD Single DTR at 66MHz
28
34
FRD Dual DTR at 66MHz
31
38
FRD Quad DTR at 66MHz
33
41
ICC2
VCC Program Current
CE# = VCC
85°C
40
45
mA
105°C
45
125°C
45
ICC3
VCC WRSR Current
CE# = VCC
85°C
120
160
105°C
160
125°C
160
ICC4
VCC Erase Current
(SER/4SER/BER32/4BER32/
BER64/4BER64)
CE# = VCC
85°C
40
45
105°C
45
125°C
45
ICC5
VCC Erase Current (CE)
CE# = VCC
85°C
120
160
105°C
160
125°C
160
ISB1
VCC Standby
Current CMOS
IS25LE
CE# = VCC,
VIN = GND or VCC
(4)
85°C
42
180 (6)
µA
105°C
280 (6)
125°C
520
IS25WE
85°C
42
180 (6)
uA
105°C
280 (6)
125°C
520
ISB2
Deep power down
current
IS25LE
CE# = VCC,
VIN = GND or VCC
(4)
85°C
34
90 (6)
µA
105°C
105 (6)
125°C
180
IS25WE
85°C
5
90 (6)
105°C
105 (6)
125°C
180
ILI
Input Leakage Current
VIN = 0V to VCC
±25)
µA
ILO
Output Leakage Current
VIN = 0V to VCC
±2(5)
µA
VIL(1)
Input Low Voltage
-0.5
0.3VCC
V
VIH(1)
Input High Voltage
0.7VCC
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 100 µA
0.2
V
VOH
Output High Voltage
IOH = -100 µA
VCC - 0.2
V



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