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IMSC011 数据表(PDF) 20 Page - STMicroelectronics |
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IMSC011 数据表(HTML) 20 Page - STMicroelectronics |
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20 / 30 page ![]() IMS C011 /30 20 SYMBOL PARAMETER MIN MAX UNITS NOTES VIH High level input voltage 2.0§ VDD+0.5 V 1, 2 VIL Low level input voltage –0.5 0.8 V 1, 2 II Input current @ GND<VI<VDD 10 mA1, 2, 3 200 mA 1, 2, 4 VOH Output high voltage @ IOH=2mA VDD–1 V 1, 2 VOL Output low voltage @ IOL=4mA 0.4 V 1, 2 IOZ Tristate output current @ GND<V0<VDD 10 mA 1, 2 PD Power dissipation 120 mW 2, 5 CIN Input capacitance @ f=1MHz 7 pF 6 COZ Output capacitance @ f=1MHz 10 pF 6 §For RnotW, RS0-1, SeparateIQ over temperature range –40<TA<25oC (where applicable), substi- tute 2.2V. Notes 1 All voltages are with respect to GND. 2 Parameters for IMS C011 measured at 4.75V<VDD<5.25V and 0oC<TA<70oC. 3 For inputs other than those in Note 4. 4 For pins 2, 3, 5, 6, 7, 9, 11, 13, 15, 16, 25. 5 Power dissipation varies with output loading. 6 Guaranteed, but not tested. Table 7.3 DC characteristics 7.2 Equivalent circuits GND D.U.T. 50pF 1.5V 1M W IOL IOH Note: This circuit represents the device sinking IOL and sourcing IOH with a 50pF capacitive load. Figure 7.1 Load circuit for AC measurements |
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