Data Sheet

ADPA7005

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier

Rev. A

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FEATURES

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Output P1dB: up to 31 dBm typical

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PSAT: up to 32 dBm typical

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Gain: up to 15.5 dB typical

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Output IP3: up to 42.5 dBm typical

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Supply voltage: 5 V at 1400 mA

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50 Ω matched input and output

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18-terminal, 7 mm × 7 mm LCC_HS package

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Integrated power detector

APPLICATIONS

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Military and space

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Test instrumentation

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Communications

GENERAL DESCRIPTION

The ADPA7005 is a gallium arsenide (GaAs), pseudomorphic high

electron mobility transfer (pHEMT), monolithic microwave integrat-

ed circuit (MMIC), 32 dBm saturated output power (PSAT), >1 W,

power amplifier, with an integrated temperature compensated, on-

chip power detector that operates between 18 GHz and 44 GHz.

The ADPA7005 provides 15.5 dB of small signal gain and approxi-

mately 32 dBm of PSAT at 32 GHz from a 5 V supply

(see Figure 26). The ADPA7005 has an output IP3 of 40 dBm

between 24 GHz to 34 GHz and is ideal for linear applications such

as electronic countermeasure and instrumentation applications re-

quiring >30 dBm of efficient PSAT. The RF input and outputs are

internally matched and dc blocked for ease of integration into

higher level assemblies. The ADPA7005 is packaged in a 7 mm

× 7 mm, 18‑terminal ceramic leadless chip carrier with heat sink

(LCC_HS) that exhibits low thermal resistance and is compatible

with surface-mount manufacturing techniques.

FUNCTIONAL BLOCK DIAGRAM

Figure 1.