| 数据搜索系统,热门电子元器件搜索 |
|
M29F040 数据表(PDF) 12 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
M29F040 数据表(HTML) 12 Page - STMicroelectronics |
|
12 / 31 page ![]() Symbol Alt Parameter Test Condition M29F040 Unit -120 -150 VCC = 5V ± 10% VCC = 5V ± 10% Standard Interface Standard Interface Min Max Min Max tAVAV tRC Address Valid to Next Address Valid E = VIL, G = VIL 120 150 ns tAVQV tACC Address Valid to Output Valid E = VIL, G = VIL 120 150 ns tELQX (1) tLZ Chip Enable Low to Output Transition G = VIL 00 ns tELQV (2) tCE Chip Enable Low to Output Valid G = VIL 120 150 ns tGLQX (1) tOLZ Output Enable Low to Output Transition E = VIL 00 ns tGLQV (2) tOE Output Enable Low to Output Valid E = VIL 50 55 ns tEHQX tOH Chip Enable High to Output Transition G = VIL 00 ns tEHQZ (1) tHZ Chip Enable High to Output Hi-Z G = VIL 30 35 ns tGHQX tOH Output Enable High to Output Transition E = VIL 00 ns tGHQZ (1) tDF Output Enable High to Output Hi-Z E = VIL 30 35 ns tAXQX tOH Address Transition to Output Transition E = VIL, G = VIL 20 20 ns Notes: 1. Sampled only, not 100% tested. 2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV. Table 12B. Read AC Characteristics (TA = 0 to 70 °C, –20 to 85°C, –40 to 85°C or –40 to 125°C) Program (PG) instruction. The memory can be programmed Byte-by-Byte. This instruction uses four write cycles. The Program command A0h is written on the third cycle after two coded cycles. A fourth write operation latches the Address on the falling edge of W or E and the Data to be written on its rising edge and starts the P/E.C. During the execution of the program by the P/E.C., the mem- ory will not accept any instruction. Read operations output the status bits after the programming has started. The status bits DQ5, DQ6 and DQ7 allow a check of the status of the programming operation. Memory programming is made only by writing ’0’ in place of ’1’ in a Byte. Erase Suspend (ES) instruction. The Block Erase operation may be suspended by this instruc- tion which consists of writing the command 0B0h without any specific address code. No coded cycles are required. It allows reading of data from another block while erase is in progress. Erase suspend is accepted only during the Block Erase instruction execution and defaults to read array mode. Writing this command during Erase timeout will, in addition to suspending the erase, terminate the timeout. The Toggle Bit DQ6 stops toggling when the P/E.C. is suspended. Toggle Bit status must be monitored at an address out of the block being erased. Toggle Bit will stop toggling between 0.1 µs and 15µs after the Erase Suspend (ES) command has been writ- ten. The M29F040 will then automatically set to Read Memory Array mode. When erase is suspended, Read from blocks being erased will output invalid data, Read from block not being erased is valid. During the suspension the memory will respond only to Erase Resume (ER) and Reset (RST) in- structions. RST command will definitively abort erasure and result in the invalid data in the blocks being erased. 12/31 M29F040 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |