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M29F040 数据表(PDF) 12 Page - STMicroelectronics

部件名 M29F040
功能描述  4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
PDF  31 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29F040 数据表(HTML) 12 Page - STMicroelectronics

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background image
Symbol
Alt
Parameter
Test Condition
M29F040
Unit
-120
-150
VCC = 5V
± 10% VCC = 5V ± 10%
Standard
Interface
Standard
Interface
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next Address Valid
E = VIL, G = VIL
120
150
ns
tAVQV
tACC
Address Valid to Output Valid
E = VIL, G = VIL
120
150
ns
tELQX
(1)
tLZ
Chip Enable Low to Output Transition
G = VIL
00
ns
tELQV
(2)
tCE
Chip Enable Low to Output Valid
G = VIL
120
150
ns
tGLQX
(1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
00
ns
tGLQV
(2)
tOE
Output Enable Low to Output Valid
E = VIL
50
55
ns
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
00
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output Hi-Z
G = VIL
30
35
ns
tGHQX
tOH
Output Enable High to Output
Transition
E = VIL
00
ns
tGHQZ
(1)
tDF
Output Enable High to Output Hi-Z
E = VIL
30
35
ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL, G = VIL
20
20
ns
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
Table 12B. Read AC Characteristics
(TA = 0 to 70
°C, –20 to 85°C, –40 to 85°C or –40 to 125°C)
Program (PG) instruction. The memory can be
programmed Byte-by-Byte. This instruction uses
four write cycles. The Program command A0h is
written on the third cycle after two coded cycles. A
fourth write operation latches the Address on the
falling edge of W or E and the Data to be written
on its rising edge and starts the P/E.C. During the
execution of the program by the P/E.C., the mem-
ory will not accept any instruction. Read operations
output the status bits after the programming has
started. The status bits DQ5, DQ6 and DQ7 allow
a check of the status of the programming operation.
Memory programming is made only by writing ’0’ in
place of ’1’ in a Byte.
Erase Suspend (ES) instruction.
The Block
Erase operation may be suspended by this instruc-
tion which consists of writing the command 0B0h
without any specific address code. No coded cycles
are required. It allows reading of data from another
block while erase is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution and defaults to read array mode. Writing
this command during Erase timeout will, in addition
to suspending the erase, terminate the timeout.
The Toggle Bit DQ6 stops toggling when the P/E.C.
is suspended. Toggle Bit status must be monitored
at an address out of the block being erased. Toggle
Bit will stop toggling between 0.1
µs and 15µs after
the Erase Suspend (ES) command has been writ-
ten.
The M29F040 will then automatically set to Read
Memory Array mode. When erase is suspended,
Read from blocks being erased will output invalid
data, Read from block not being erased is valid.
During the suspension the memory will respond
only to Erase Resume (ER) and Reset (RST) in-
structions. RST command will definitively abort
erasure and result in the invalid data in the blocks
being erased.
12/31
M29F040



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