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M29W800AT, M29W800AB

Table 16. Read AC Characteristics

Note: 1. Sampled only, not 100% tested.

3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.

Symbol

Alt

Parameter

Test

Conditio n

M29W800AT / M29W800AB

Unit

100

120

CL = 30pF

CL = 30pF

Min

Max

Min

Max

Address Valid to Next

Address Valid

100

120

ns

Address Valid to Output

Valid

100

120

ns

Address Transition to

Output Transition

00

ns

BYTE Switching High to

Output Valid

50

60

ns

BYTE Switching Low to

Output High Z

50

60

ns

Chip Enable High to Output

Transition

00

ns

(1)

Chip Enable High to Output

Hi-Z

30

30

ns

Chip Enable to BYTE

Switching Low or High

55

ns

(2)

Chip Enable Low to Output

Valid

100

120

ns

(1)

Chip Enable Low to Output

Transition

00

ns

Output Enable High to

Output Transition

00

ns

(1)

Output Enable High to

Output Hi-Z

30

30

ns

(2)

Output Enable Low to

Output Valid

40

50

ns

(1)

Output Enable Low to

Output Transition

00

ns

RP High to Chip Enable

Low

50

50

ns

(1, 3)

RP Low to Read Mode

10

10

µs

RP Pulse Width

500

500

ns