M29W800AT datasheet(20/33 Pages) STMICROELECTRONICS

20 / 33 page

M29W800AT, M29W800AB

20/33

Table 19. Write AC Characteristics, E Controlled

(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)

Note: 1. Sampled only, not 100% tested.

2. This timing is for Temporary Block Unprotection operation.

Symbol

Alt

Parameter

M29W800AT / M29W800AB

Unit

VCC = 3.0V to 3.6V

CL = 30pF

VCC = 3.0V to 3.6V

CL = 30pF

Min

Max

Min

Max

tAVAV

tWC

Address Valid to Next Address Valid

tAVEL

tAS

Address Valid to Chip Enable Low

tDVEH

tDS

Input Valid to Chip Enable High

tEHDX

tDH

Chip Enable High to Input Transition

tEHEL

tCPH

Chip Enable High to Chip Enable Low

tEHGL

tOEH

Chip Enable High to Output Enable Low

tEHRL

(1)

tBUSY

Program Erase Valid to RB Delay

tEHWH

tWH

Chip Enable High to Write Enable High

tELAX

tAH

Chip Enable Low to Address Transition

tELEH

tCP

Chip Enable Low to Chip Enable High

tGHEL

Output Enable High Chip Enable Low

tPHPHH

(1, 2)

tVIDR

RP Rise TIme to VID

500

tPHWL

(1)

tRSP

RP High to Write Enable Low

µs

tPLPX

tRP

RP Pulse Width

500

tVCHWL

tVCS

VCC High to Write Enable Low

µs

tWLEL

tWS

Write Enable Low to Chip Enable Low

POWER SUPPLY

Power Up

The memory Command Interface is reset on pow-

er up to Read Array. The device does not accept

commands on the first rising edge of W, if both W

and E are at VIL with G at VIH during power-up.

Any write cycle initiation is blocked when VCC is

below VLKO.

Supply Rails

Normal precautions must be taken for supply volt-

age decoupling; each device in a system should

have the VCC rail decoupled with a 0.1µF capacitor

close to the VCC and VSS pins. The PCB trace

widths should be sufficient to carry the VCC pro-

gram and erase currents required.

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