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M29W800AT 数据表(PDF) 19 Page - STMicroelectronics |
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M29W800AT 数据表(HTML) 19 Page - STMicroelectronics |
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19 / 33 page ![]() 19/33 M29W800AT, M29W800AB Figure 8. Write AC Waveforms, W Controlled Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. AI02183 E G W A0-A18/ A–1 DQ0-DQ7/ DQ8-DQ15 VALID VALID VCC tVCHEL tWHEH tWHWL tELWL tAVWL tWHGL tWLAX tWHDX tAVAV tDVWH tWLWH tGHWL RB tWHRL Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this in- struction which consists of writing the command B0h without any specific address. No Coded cy- cles are required. It permits reading of data from another block and programming in another block while an erase operation is in progress. Erase sus- pend is accepted only during the Block Erase in- struction execution. Writing this command during Erase timeout will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops toggling when the P/E.C. is suspended. The Toggle bits will stop toggling between 0.1 µs and 15 µs after the Erase Suspend (ES) command has been written. The device will then automatically be set to Read Memory Array mode. When erase is suspended, a Read from blocks being erased will output DQ2 toggling and DQ6 at ’1’. A Read from a block not being erased returns valid data. During suspension the memory will respond only to the Erase Resume ER and the Program PG instruc- tions. A Program operation can be initiated during erase suspend in one of the blocks not being erased. It will result in both DQ2 and DQ6 toggling when the data is being programmed. A Read/Re- set command will definitively abort erasure and re- sult in invalid data in the blocks being erased. Erase Resume (ER) Instruction. If an Erase Suspend instruction was previously executed, the erase operation may be resumed by giving the command 30h, at any address, and without any Coded cycles. |
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