M48T35AY datasheet(7/19 Pages) STMICROELECTRONICS

7 / 19 page

7/19

M48T35AY, M48T35AV

Table 7. Power Down/Up Trip Points DC Characteristics (1)

(TA = 0 to 70 °C or –40 to 85 °C)

Note: 1. All voltages referenced to VSS.

2. CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top tDR = 7 years (typ).

3. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - grade 6 device).

Table 8. Power Down/Up AC Characteristics

(TA = 0 to 70 °C or –40 to 85 °C)

Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-

es VPFD (min).

2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

3. tREC (min) = 20ms for industrial temperature grade 6 device.

Symbol

Parameter

Min

Typ

Max

Unit

VPFD

Power-fail Deselect Voltage

M48T35AY

4.2

4.35

4.5

M48T35AV

2.7

2.9

3.0

VSO

Battery Back-up Switchover Voltage

M48T35AY

3.0

M48T35AV

VPFD –100mV

tDR

Expected Data Retention Time (at 25°C)

Grade 1

10 (2)

YEARS

Grade 6

10 (3)

YEARS

Symbol

Parameter

Min

Max

Unit

tPD

E or W at VIH before Power Down

0µs

(1)

VPFD (max) to VPFD (min) VCC Fall Time

300

µs

tFB

(2)

VPFD (min) to VSS VCC Fall Time

M48T35AY

µs

M48T35AV

150

µs

VPFD (min) to VPFD (max) VCC Rise Time

µs

tRB

VSS to VPFD (min) VCC Rise Time

1µs

tREC

(3)

VPFD (max) to Inputs Recognized

200

Figure 5. Power Down/Up Mode AC Waveforms

AI01168C

VCC

INPUTS

(PER CONTROL INPUT)

OUTPUTS

DON'T CARE

HIGH-Z

tFB

tPD

tRB

tDR

VALID

(PER CONTROL INPUT)

RECOGNIZED

VPFD (max)

VPFD (min)

VSO

tREC

M48T35AY 数据表(PDF) 7 Page - STMicroelectronics

M48T35AY 数据表(HTML) 7 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

数据表下载

链接网址

M48T35AY 数据表(PDF) 7 Page - STMicroelectronics

M48T35AY 数据表(HTML) 7 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

数据表 下载

链接网址

数据表下载