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M48T35AY 数据表(PDF) 3 Page - STMicroelectronics

部件名 M48T35AY
功能描述  256 Kbit 32Kb x8 TIMEKEEPER SRAM
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M48T35AY 数据表(HTML) 3 Page - STMicroelectronics

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M48T35AY, M48T35AV
Table 2. Absolute Maximum Ratings (1)
Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational section
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect
reliability.
2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
Grade 1
0 to 70
°C
Grade 6
–40 to 85
°C
TSTG
Storage Temperature (VCC Off, Oscillator Off)
–40 to 85
°C
TSLD
(2)
Lead Solder Temperature for 10 seconds
260
°C
VIO
Input or Output Voltages
M48T35AY
–0.3 to 7
V
M48T35AV
–0.3 to 4.6
V
VCC
Supply Voltage
M48T35AY
–0.3 to 7
V
M48T35AV
–0.3 to 4.6
V
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Table 3. Operating Modes (1)
Note: 1. X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
2. See Table 7 for details.
Mode
VCC
E
G
W
DQ0-DQ7
Power
Deselect
4.5V to 5.5V
or
3.0V to 3.6V
VIH
X
X
High Z
Standby
Write
VIL
X
VIL
DIN
Active
Read
VIL
VIL
VIH
DOUT
Active
Read
VIL
VIH
VIH
High Z
Active
Deselect
VSO to VPFD (min)
(2)
X
X
X
High Z
CMOS Standby
Deselect
≤ VSO
X
X
X
High Z
Battery Back-up Mode
The eight clock bytes are not the actual clock
counters themselves; they are memory locations
consisting of BiPORT™ read/write memory cells.
The M48T35AY/35AV includes a clock control cir-
cuit which updates the clock bytes with current in-
formation once per second. The information can
be accessed by the user in the same manner as
any other location in the static memory array.
The M48T35AY/35AV also has its own Power-fail
Detect circuit. The control circuitry constantly mon-
itors the single 5V supply for an out of tolerance
condition. When VCC is out of tolerance, the circuit
write protects the SRAM, providing a high degree
of data security in the midst of unpredictable sys-
tem operation brought on by low VCC. As VCC falls
below approximately 3V, the control circuitry con-
nects the battery which maintains data and clock
operation until valid power returns.



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