M48T59, M48T59Y, M48T59V

2/21

Figure 2A. DIP Connections

A1

A0

DQ0

A7

A4

A3

A2

A6

A5

IRQ/FT

A10

A8

A9

DQ7

W

A11

G

E

DQ5

DQ1

DQ2

DQ3

VSS

DQ4

DQ6

A12

RST

VCC

AI01381D

M48T59

M48T59Y

8

1

2

3

4

5

6

7

9

10

11

12

13

14

16

15

28

27

26

25

24

23

22

21

20

19

18

17

Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or any other conditions above those indicated in the operational section

of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect

reliability.

2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).

CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.

CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.

2. See Table 7 for details.

Symbol

Parameter

Value

Unit

Ambient Operating Temperature

Grade 1

0 to 70

°C

Grade 6

–40 to 85

–40 to 85

°C

(2)

Lead Solder Temperature for 10 seconds

260

°C

Input or Output Voltages

–0.3 to 7

V

Supply Voltage

M48T59/M48T59Y

–0.3 to 7

V

M48T59V

–0.3 to 4.6

Output Current

20

mA

Power Dissipation

1

W

Mode

E

G

W

DQ7-DQ0

Power

Deselect

4.75V to 5.5V

or

4.5V to 5.5V

or

3.0V to 3.6V

X

X

High Z

Standby

Write

X

Active

Read

Active

Read

High Z

Active

Deselect

(2)

X

X

X

High Z

CMOS Standby

Deselect

X

X

X

High Z

Battery Back-up Mode

Figure 2B. SOIC Connections

AI01382E

8

2

3

4

5

6

7

9

10

11

12

13

14

22

21

20

19

18

17

16

15

28

27

26

25

24

23

1

A1

A0

DQ0

A7

A4

A3

A2

A6

A5

IRQ/FT

A10

A8

A9

DQ7

W

A11

G

E

DQ5

DQ1

DQ2

DQ3

VSS

DQ4

DQ6

A12

RST

VCC

M48T59Y

M48T59V