M48T59, M48T59Y, M48T59V

4/21

Note: 1. Effective capacitance measured with power supply at 5V.

2. Sampled only, not 100% tested.

3. Outputs deselected.

Table 6. DC Characteristics

Note: 1. Outputs deselected.

2. Negative spikes of –1V allowed for up to 10ns once per cycle.

3. The IRQ/FT and RST pins are Open Drain.

2. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - grade 6 device).

Symbol

Parameter

Test Condition

Min

Max

Unit

Input Capacitance

10

pF

(3)

Input / Output Capacitance

10

pF

Symbol

Parameter

Test Condition

M48T59/Y

M48T59V

Unit

Min

Max

Min

Max

(1)

Input Leakage Current

0V

±1

±1

µA

(1)

Output Leakage Current

0V

±1

±1

µA

Supply Current

Outputs open

50

30

mA

Supply Current (Standby)

TTL

32

mA

Supply Current (Standby)

CMOS

31

mA

(2)

Input Low Voltage

–0.3

0.8

–0.3

0.8

V

Input High Voltage

2.2

2

V

Output Low Voltage

0.4

0.4

V

Output Low Voltage (IRQ/FT

0.4

0.4

V

Output High Voltage

2.4

2.4

V

Symbol

Parameter

Min

Typ

Max

Unit

Power-fail Deselect Voltage

M48T59

4.5

4.6

4.75

V

M48T59Y

4.2

4.35

4.5

V

M48T59V

2.7

2.9

3.0

V

Battery Back-up Switchover Voltage

M48T59/Y

3.0

V

M48T59V

V

ExpectedDataRetentionTime(at25°C)

Grade 1

7

YEARS

Grade 6

YEARS