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M48Z2M1 数据表(PDF) 3 Page - STMicroelectronics

部件名 M48Z2M1
功能描述  16 Mb 2Mb x 8 ZEROPOWER SRAM
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M48Z2M1 数据表(HTML) 3 Page - STMicroelectronics

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able after the later of Chip Enable Access time
(tELQV) or Output Enable Access Time (tGLQV). The
state of the eight three-state Data I/O signals is
controlled by E and G. If the outputs are activated
before tAVQV, the data lines will be driven to an
indeterminate state until tAVQV. If the Address In-
puts are changed while E and G remain low, output
data will remain valid for Output Data Hold time
(tAXQX) but will go indeterminate until the next Ad-
dress Access.
WRITE MODE
The M48Z2M1/2M1Y is in the Write Mode when-
ever W and E are active. The start of a write is
referenced from the latter occurring falling edge of
W or E. A write is terminated by the earlier rising
edge of W or E.
The addresses must be held valid throughout the
cycle. E or W must return high for minimum of tEHAX
from E or tWHAX from W prior to the initiation of
another read or write cycle. Data-in must be valid
tDVEH or tDVWH prior to the end of write and remain
valid for tEHDX or tWHDX afterward. G should be kept
high during write cycles to avoid bus contention;
although, if the output bus has been activated by a
low on E and G, a low on W will disable the outputs
tWLQZ after W falls.
AI01030
5V
OUT
CL = 100pF or 5pF
CL includes JIG capacitance
1.9k
DEVICE
UNDER
TEST
1k
Figure 4. AC Testing Load Circuit
Input Rise and Fall Times
≤ 5ns
Input Pulse Voltages
0 to 3V
Input and Output Timing Ref. Voltages
1.5V
Note that Output Hi-Z is defined as the point where data is no
longer driven.
Table 4. AC Measurement Conditions
AI02050
INTERNAL
BATTERIES
E
VCC
VSS
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
2048K x 8
SRAM ARRAY
A0-A20
DQ0-DQ7
W
G
POWER
E
Figure 3. Block Diagram
3/12
M48Z2M1, M48Z2M1Y



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