AI02065

18

A0-A17

W

DQ0-DQ14

VCC

M29W400T

M29W400B

E

VSS

15

G

RP

DQ15A–1

BYTE

RB

Figure 1. Logic Diagram

M29W400T

M29W400B

4 Mbit (512Kb x8 or 256Kb x16, Boot Block)

Low Voltage Single Supply Flash Memory

NOT FOR NEW DESIGN

M29W400T and M29W400B are replaced

respectively by the M29W400BT and

M29W400BB

2.7V to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

FAST ACCESS TIME: 90ns

FAST PROGRAMMING TIME

–10

µs by Byte / 16µs by Word typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI BLOCK PROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code, M29W400T: 00EEh

– Device Code, M29W400B: 00EFh

DESCRIPTION

The M29W400 is a non-volatile memory that may

be erased electrically at the block or chip level and

programmed in-system on a Byte-by-Byte or Word-

supply. For Program and Erase operations the

necessary high voltages are generated internally.

The device can also be programmed in standard

programmers.

The array matrix organisation allows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protected against pro-

graming and erase on programming equipment,

November 1999

1/34

This is information on a product still in productionbut not recommended for new designs.

44

1

SO44 (M)

TSOP48 (N)

12 x 20 mm

BGA

FBGA48 (ZA)

8 x 6 solder balls