 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
M29W400 数据表(PDF) 20 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
M29W400 数据表(HTML) 20 Page - STMicroelectronics |
|
|
20 / 34 page  Symbol Alt Parameter M29W400T / M29W400B Unit -90 -100 VCC = 3.0V to 3.6V CL = 30pF VCC = 2.7V to 3.6V CL = 30pF Min Max Min Max tAVAV tWC Address Valid to Next Address Valid 90 100 ns tWLEL tWS Write Enable Low to Chip Enable Low 0 0 ns tELEH tCP Chip Enable Low to Chip Enable High 45 50 ns tDVEH tDS Input Valid to Chip Enable High 45 50 ns tEHDX tDH Chip Enable High to Input Transition 0 0 ns tEHWH tWH Chip Enable High to Write Enable High 0 0 ns tEHEL tCPH Chip Enable High to Chip Enable Low 30 30 ns tAVEL tAS Address Valid to Chip Enable Low 0 0 ns tELAX tAH Chip Enable Low to Address Transition 45 50 ns tGHEL Output Enable High Chip Enable Low 0 0 ns tVCHWL tVCS VCC High to Write Enable Low 50 50 µs tEHGL tOEH Chip Enable High to Output Enable Low 0 0 ns tPHPHH (1,2) tVIDR RP Rise TIme to VID 500 500 ns tPLPX tRP RP Pulse Width 500 500 ns tEHRL (1) tBUSY Program Erase Valid to RB Delay 90 90 ns tPHWL (1) tRSP RP High to Write Enable Low 4 4 µs Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. Table 16A. Write AC Characteristics, Chip Enable Controlled (TA = 0 to 70 °C, –20 to 85°C or –40 to 85°C) Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this instruc- tion which consists of writing the command B0h without any specific address. No Coded cycles are required. It permits reading of data from another block and programming in another block while an erase operation is in progress. Erase suspend is accepted only during the Block Erase instruction execution. Writing this command during Erase timeout will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops toggling when the P/E.C. is suspended.The Toggle bits will stop toggling between0.1 µs and 15µs after the Erase Suspend (ES) command has been writ- ten. The device will then automatically be set to Read Memory Array mode. When erase is sus- pended, a Read from blocks being erased will output DQ2 toggling and DQ6 at ’1’. A Read from a block not being erased returns valid data. During suspension the memory will respond only to the Erase Resume ER and the Program PG instruc- tions. A Program operation can be initiated during erase suspend in one of the blocks not being erased. It will result in both DQ2 and DQ6 toggling when the data is being programmed. ARead/Reset command will definitively abort erasure and result in invalid data in the blocks being erased. 20/34 M29W400T, M29W400B |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
