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M29W400 数据表(PDF) 17 Page - STMicroelectronics

部件名 M29W400
功能描述  4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
PDF  34 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29W400 数据表(HTML) 17 Page - STMicroelectronics

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background image
Symbol
Alt
Parameter
M29W400T / M29W400B
Unit
-90
-100
VCC = 3.0V to 3.6V
CL = 30pF
VCC = 2.7V to 3.6V
CL = 30pF
Min
Max
Min
Max
tAVAV
tWC
Address Valid to Next Address Valid
90
100
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
45
50
ns
tDVWH
tDS
Input Valid to Write Enable High
45
50
ns
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
30
30
ns
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
45
50
ns
tGHWL
Output Enable High to Write Enable Low
0
0
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
50
50
µs
tWHGL
tOEH
Write Enable High to Output Enable Low
0
0
ns
tPHPHH
(1,2)
tVIDR
RP Rise Time to VID
500
500
ns
tPLPX
tRP
RP Pulse Width
500
500
ns
tWHRL
(1)
tBUSY Program Erase Valid to RB Delay
90
90
ns
tPHWL
(1)
tRSP
RP High to Write Enable Low
4
4
µs
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Table 15A. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70
°C, –20 to 85°C or –40 to 85°C)
Program (PG) Instruction. This instruction uses
four write cycles. Both for Byte-wide configuration
and for Word-wide configuration. The Program
command A0h is written to address AAAAh in the
Byte-wide configuration or to address 5555h in the
Word-wide configurationon the third cycle after two
Coded cycles. A fourth write operation latches the
Address on the falling edge of W or E and the Data
to be written on the rising edge and starts the
P/E.C. Read operations output the Status Register
bits after the programming has started. Memory
programming is made only by writing ’0’ in place of
’1’. Statusbits DQ6 and DQ7 determine if program-
ming is on-going and DQ5 allows verification of any
possible error. Programming at an address not in
blocks being erased is also possible during erase
suspend. In this case, DQ2 will toggle at the ad-
dress being programmed.
17/34
M29W400T, M29W400B



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