M58LW064 datasheet(18/53 Pages) STMICROELECTRONICS

18 / 53 page

M58LW064A, M58LW064B

18/53

Read Electronic Signature Instruction (RSIG).

An Electronic Signature can be read from the

memory allowing programming equipment or ap-

plications to automatically match their interface to

the characteristics of the device.

The Electronic Signature instruction consists of a

first write cycle giving the command 90h, followed

by a subsequent read which will output the Manu-

facturer Code, the Device Code or the Block Pro-

tection Status. The Manufacturer Code is output

when all the address inputs are at VIL. The Device

Code is output when A1 (for the M58LW064A) or

A2 (for the M58LW064B) is at VIH, with all other

address inputs at VIL. The code is output on DQ0-

DQ7 with DQ8-DQ31 at VIL.

The RSIG Instruction also allows access to the

Block Protection Status for the selected block ad-

dress defined by A17-A22. After the Read Elec-

tronic Signature (RSIG) command, A1-A2 (for the

M58LW064A) or A2-A3 (for the M58LW064B) are

set to VIH, while A17-A22 define the address of the

block to be queried. A read operation outputs 01h

if the block is protected and 00h if the block is not

protected.

Read Query Instruction (RCFI). The Read Que-

ry Instruction is initiated with one write cycle giving

the command 98h at any address. Subsequent

read operations, depending on the address speci-

fied, will output the Block Status information, the

Common Flash Interface ID string, the System In-

terface information, the Device Geometry Config-

uration or STMicroelectronics Specific Query

information. The address mapping for the informa-

tion is shown in Table 14.

Read Status Register Instruction (RSR). The

Read Status Register Instruction consists of one

write cycle giving the command 70h. Subsequent

read operations, independent of the address, out-

put the Status Register information that indicates if

a Block Erase, Write to Buffer and Program, Block

Protect or Block Unprotect operation has been

completed successfully. See Table 12. Once initi-

ated the RSR Instruction is active until another

command is given to the Command Interface.

For Asynchronous Read, the Status Register in-

formation is present on the output data bus when

both Chip Enable E and Output Enable G are Low.

In Synchronous Burst Read the Status Register in-

formation is output on the data bus DQ1-DQ7

when Latch Enable L goes High or on a valid Burst

Clock K edge (M6 in the Burst Configuration Reg-

ister specifies the rising or falling valid clock edge)

when Latch Enable L is low. An interactive update

of the status register information is possible by

toggling Output Enable G, or when the device is

INSTRUCTIONS AND COMMANDS

The Command Interface latches commands writ-

ten to the memory. Instructions are made up of

one or more commands to perform:

– Read Array (RD),

– Read Electronic Signature or Read Block Pro-

tection (RSIG),

– Read Status Register (RSR),

– Read Query (RCFI),

– Clear Status Register (CLRS),

– Block Erase (EE),

– Write to Buffer and Program (WBPR),

– Erase/Program Suspend (PES),

– Erase/Program Resume (PER),

– Set Burst Configuration Register (SBCR),

– Block Protect (BP), and

– Block Unprotect (BU).

Instructions (see Table 12) are composed of a first

write sequence followed by either a second write

sequence needed to confirm an Erase or Program

instruction or by a read operation in order to read

data from the array, the Electronic Signature, the

Block Protection information, the CFI or the Status

Buffer and Program and Block Erase operations

consist of two commands written into the memory

Command Interface (C.I.) that start the automatic

P/E.C. operation. Erasure of a memory block may

be suspended, in order to read data from or to pro-

gram data in an other block, and then be resumed.

Write to Buffer and Program operation may be

suspended, in order to read data from another

block, and then be resumed.

At power-up the Command Interface is reset to

Read Array. The appropriate Instruction must be

given to access Read Query (RCFI), Read Elec-

tronic Signature or Block Protection Status (RSIG)

or Read Status Register (RSR). Reading of the

memory array is disabled during a Block Protect/

Unprotect (BP, BU), a Block Erase (EE) or a Write

to Buffer and Program (WBPR) Instruction. A

Erase/Program Suspend Instruction (PES) must

be given to read under these conditions.

Read Array Instruction (RD). The Read Array

Instruction consists of one write cycle giving the

command FFh. Subsequent read operations will

read the array content addressed and output the

corresponding data. The Read Array Instruction

remains active until another one is written into the

Command Interface. At Power-up or at the exit of

the Reset/Power-down mode, the device is by de-

fault initialised to Read Array.

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