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M58LW064 数据表(PDF) 36 Page - STMicroelectronics |
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M58LW064 数据表(HTML) 36 Page - STMicroelectronics |
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36 / 53 page ![]() M58LW064A, M58LW064B 36/53 Table 26. Asynchronous Write and Latch Enable Controlled Write (TA = 0 to 70°C, –40 to 85°C, VDD = 2.7V to 3.6V, VDD = 1.8V to VDD) Symbol Parameter Test Conditio n Min Max Unit tAVLH Address Valid to Latch Enable High 10 ns tAVWH Address Valid to Write Enable High E= VIL 50 ns tDVWH Data Input Valid to Write Enable High E= VIL 50 ns tELWL Chip Enable Low to Write Enable Low 0 ns tLHAX Latch Enable High to Address Transition 3 ns tLLLH Latch Enable low to Latch Enable High 10 ns tLLWH latch Enable Low to Write Enable High 50 ns tQVRH Output Valid to Reset/Power Down VDD 0 ns tQVVPL Output Valid to Program/Erase Enable Low 0 ns tRHHWH Reset/Power Down VHH to Write Enable High 0 ns tVPHWH Program/Erase Enable High to Write Enable High 0 ns tWHAX Write Enable High to Address Transition E= VIL 10 ns tWHBL Write Enable High to Read/Busy low 90 ns tWHDX Write Enable High to Input Transition E= VIL 10 ns tWHEH Write Enable High to Chip Enable High 0 ns tWHGL Write Enable High to Output Enable Low 35 ns tWHWL Write Enable High to Write Enable Low 30 ns tWLWH Write Enable Low to Write Enable High E = VIL 70 ns |
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