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M58LW064 数据表(PDF) 36 Page - STMicroelectronics

部件名 M58LW064
功能描述  64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
PDF  53 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M58LW064 数据表(HTML) 36 Page - STMicroelectronics

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Table 26. Asynchronous Write and Latch Enable Controlled Write
(TA = 0 to 70°C, –40 to 85°C, VDD = 2.7V to 3.6V, VDD = 1.8V to VDD)
Symbol
Parameter
Test Conditio n
Min
Max
Unit
tAVLH
Address Valid to Latch Enable High
10
ns
tAVWH
Address Valid to Write Enable High
E= VIL
50
ns
tDVWH
Data Input Valid to Write Enable High
E= VIL
50
ns
tELWL
Chip Enable Low to Write Enable Low
0
ns
tLHAX
Latch Enable High to Address Transition
3
ns
tLLLH
Latch Enable low to Latch Enable High
10
ns
tLLWH
latch Enable Low to Write Enable High
50
ns
tQVRH
Output Valid to Reset/Power Down VDD
0
ns
tQVVPL
Output Valid to Program/Erase Enable Low
0
ns
tRHHWH
Reset/Power Down VHH to Write Enable High
0
ns
tVPHWH
Program/Erase Enable High to Write Enable High
0
ns
tWHAX
Write Enable High to Address Transition
E= VIL
10
ns
tWHBL
Write Enable High to Read/Busy low
90
ns
tWHDX
Write Enable High to Input Transition
E= VIL
10
ns
tWHEH
Write Enable High to Chip Enable High
0
ns
tWHGL
Write Enable High to Output Enable Low
35
ns
tWHWL
Write Enable High to Write Enable Low
30
ns
tWLWH
Write Enable Low to Write Enable High
E = VIL
70
ns



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