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MK5027DIP 数据表(PDF) 10 Page - STMicroelectronics |
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MK5027DIP 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 19 page ![]() MK5027 ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Temperature under Bias –25 °C to +100°C Storage Temperature –65 °C to +150°C Voltage on Any Pin with Respect to Ground –0.5V to VCC +0.5V Power Dissipation 0.50W Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the above device. This is a stress rating only and functional operation of the device at these or any other condition above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affectdevice reliability. DC CHARACTERISTICS TA=0 °Cto 70 °C, VCC = +5V ±5 percent unless otherwise specified. Symbol Parameter Min. Typ. Max. Units VIL -0.5 +0.8 V VIH +2.0 VCC+0.5 V VOL @ IOL = 3.2 mA +0.5 V VOH @ IOH= -0.4 mA +2.4 V IIL @ VIN = 0.4 to VCC +10 mA ICC @ TSCT = 100 ns 50 µA CAPACITANCE f = 1MHz Symbol Parameter Min. Typ. Max. Units CIN Capacitance on Input pins 10 pF COUT Capacitance on Output Pins 10 pF CIO Capacitance on I/O pins 20 pF AC TIMING SPECIFICATIONS TA =0 °Cto 70 °C, VCC = +5V ±5 percent, unless otherwise specified. No Signal Symbol Parameter Test Condition Min. Typ. Max. Units 1 SYSCLK TSCT SYSCLK period 100 20000 ns 2 SYSCLK TSCL SYSCLK low time 45 ns 3 SYSCLK TSCH SYSCLK high time 45 ns 4 SYSCLK TSCR Rise time of SYSCLK 0 8 ns 5 SYSCLK TSCF Fall time of SYSCLK 0 8 ns 6 TCLK TTCT TCLK period 140 ns 7 TCLK TTCL TCLK low time 63 ns 8 TCLK TTCH TCLK high time 63 ns 9 TCLK TTCR Rise time of TCLK CL = 50 pF 0 8 ns 10 TCLK TTCF Fall time of TCLK 0 8 ns 11 TD TTDP TD data propagation delay after the falling edge of TCLK CL = 50 pF 40 ns 12 TD TTDH TD data hold time after the falling edge of TCLK 5ns MK5027 10/19 |
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