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TDA7572 数据表(PDF) 22 Page - STMicroelectronics

部件名 TDA7572
功能描述  200W mono bridge PWM amplifier with built-in step-up converter
PDF  64 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TDA7572 数据表(HTML) 22 Page - STMicroelectronics

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Electrical specifications
TDA7572
22/64
4.3.5
Modulator
4.3.6
Gate drive and output stage control
Table 10.
Modulator
Symbol
Parameters
Test conditions
Min.
Typ.
Max.
Units
Integrator op. amp.
Int_Voff
Input offset voltage
-2.5
+2.5
mV
Int_ibias
Input bias current
Guaranteed by design
500
nA
Toff
Maximum duty cycle
Vsp =1 4.4
1.1
µs
Table 11.
Gate drive and output stage control
Symbol
Parameters
Test conditions
Min.
Typ.
Max.
Units
VOL_LSD
LSG low voltage
Isink = 0.5A
Isink = 20mA
1.75
0.080
V
VOH_LSD
LSG high voltage
Isource = 0.5A
Isource = 20mA
7
9.2
V
VOL_HSD
HSG low voltage
Isink = 0.5A
Isink = 20mA
VSP-7
VSP-
9.2
V
VOH_HSD
HSG high voltage
Isource = 0.5A
Isource = 20mA
VSP-
1.75
VSP-
0.080
V
HSG low Z drive tdelay
After a commutation
2
10
µs
LSG low Z drive tdelay
After a commutation
2
10
µs
HSG HiZ sink current
VHSG=VSP t>5uS
150
mA
LSG HiZ source current
VLSG=VSM , t>5uS
150
mA
Overcurrent sensing
IlimThresh
Range of Ilim Trthresh
0.3
1.1
V
Vilim
Vilim
Engagement of the current limiting
VlimitTreshold=1V w.r.t. VM2p5
Vlim*
3.0
Vlim*
5.0
V
Vitrip
Start of cycle by cycle current
limiting
-15%
Vlim *
6.0
+15%
V
Anti-shoo through
PVGS_ON
PFET gate voltage that will
block NFET enhancement
-2.5
V
PVGS_OFF
PFET gate voltage that will
allow NFET enhancement
-3.5
V



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