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X006 数据表(PDF) 2 Page - STMicroelectronics

部件名 X006
功能描述  0.8 A sensitive gate SCRs
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

X006 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
X006
2/9
1
Characteristics
Table 1.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (180 °Conduction angle)
TO-92
Tl = 85 °C
0.8
A
SOT-223
Ttab = 100 °C
IT(AV)
Average on-state current (180 °Conduction angle)
TO-92
Tl = 85 °C
0.5
A
SOT-223
Ttab = 100 °C
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25 °C
10
A
tp = 10 ms
9
I²tI²t Value for fusing
tp = 10 ms
Tj = 25 °C
0.4
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
1
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
0.1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 2.
Electrical characteristics
Symbol
Test Conditions
Value
Unit
IGT
VD = 12 V, RL = 140 Ω
MIN.
15
µA
MAX.
200
VGT
MAX.
0.8
V
VGD
VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ
Tj = 125 °C
MIN.
0.2
V
VRG
IRG = 10 µA
MIN.
5
V
IH
IT = 50 mA, RGK = 1 kΩ
MAX.
5
mA
IL
IG = 1 mA, RGK = 1 kΩ
MAX.
6
mA
dV/dt
VD = 67% VDRM, RGK = 1 kΩ
Tj = 125 °C
MIN.
25
V/µs
VTM
ITM = 1 A, tp = 380 µs
Tj = 25 °C
MAX.
1.35
V
Vt0
Threshold voltage
Tj = 125 °C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125 °C
MAX.
245
m
Ω
IDRM
IRRM
VDRM = VRRM , RGK = 1 kΩ
Tj = 25 °C
MAX.
1
µA
Tj = 125 °C
MAX.
100



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