X006 datasheet(5/9 Pages) STMICROELECTRONICS

5 / 9 page

X006

Characteristics

5/9

Figure 15.

On-state characteristics (maximum values)

Figure 11.

Relative variation of dV/dt immunity

versus gate-cathode resistance

(typical values)

Figure 12.

Relative variation of dV/dt immunity

versus gate-cathode capacitance

(typical values)

0.1

1.0

10.0

100.0

1.0E-01

1.0E+00

1.0E+01

R(k )

dV/dt[R

] / dV/dt[

=1k ]

RGK

V = 0.67 x V

DRM

100

(nF)

dV/dt[C

] / dV/dt[

=1k ]

RGK

V = 0.67 x V

= 1k

DRM

Figure 13.

Surge peak on-state current versus

number of cycles

Figure 14.

Non repetitive surge peak on-state

current for a sinusoidal pulse with

width tP < 10ms, and corresponding

value of I2t

100

1000

(A)

TSM

Number of cycles

Non repetitive

T initial=25°C

Repetitive

T =25°C

t =10ms

One cycle

1.E-01

1.E+00

1.E+01

1.E+02

0.01

0.10

1.00

10.00

(A), I t (A s)

TSM

t (ms)

I t

ITSM

T initial = 25°C

0.01

0.10

1.00

10.00

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

(A)

(V)

Tj=125°C

T =25°C

V =0.85V

R =245m

T max.:

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