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SMTHBT200 数据表(PDF) 2 Page - STMicroelectronics |
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SMTHBT200 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() Symbol Parameter Value Unit Rth(j-I) Junction to leads 10 °C/W Rth(j-a) Junction to ambient on printed circuit (with standard footprint dimensions) 75 °C/W THERMAL RESISTANCES Symbol Parameter Value Unit Ipp Peak pulse current: 10/1000 µs (open circuit voltage waveform 10/1000 µs) 8/20 µs (open circuit voltage waveform 4kV 1.2/50 µs) 100 250 A A ITSM Non repetitive surge peak on-state current tp = 20ms 55 A dV/dt Critical rate of rise of off-state voltage VRM 5 KV/ µs TL Maximum lead temperature for soldering during 10s 260 °C Tstg Tj Storage temperature range Maximum junction temperature - 55 to + 150 150 °C °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C, unless otherwise specified) 100 50 %IPP t t rp 0 Note 1: Pulse waveform 10 / 1000 µstr = 10 µs tp = 1000 µs 8/ 20 µstr = 8 µstp = 20 µs 5 / 310 µstr = 5 µs tp = 310 µs 1/ 20 µstr = 1 µstp = 20 µs 2/ 10 µstr = 2 µstp = 10 µs SMTHBT200 2/6 |
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