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SMTHBT200 数据表(PDF) 4 Page - STMicroelectronics |
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SMTHBT200 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 6 page ![]() TEST CIRCUIT 2 for IH parameter. R -VP VBAT = - 48 V Surge generator D.U.T. This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs. - The D.U.T. will come back to the off-state within 50 ms max. TEST CIRCUIT 1 FOR IBO and VBO parameters: TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt -VOUT = 250 VRMS,R1 = 140 Ω. - Device with VBO ≥ 200 Volt -VOUT = 480 VRMS,R2 = 240 Ω. static relay. R1 R2 240 140 D.U.T V BO measure IBO measure tp = 20ms K Transformer 220V/800V 5A Auto Transformer 220V/2A Vout SMTHBT200 4/6 |
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