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SMTHBT200 数据表(PDF) 3 Page - STMicroelectronics |
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SMTHBT200 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() Type IRM @VRM max. IR @VR max. note 1 VBO @IBO max. min. max. note 2 IH min. note 3 C max. note 4 µAV µAV V mA mA mA pF SMTHBT200 10 180 50 200 265 150 800 150 150 Note 2 : IR measured at VR guarantees VBR>VR Note 2 : Measured at 50Hz, see test circuit 1. Note 3 : See functional holding current test circuit 2. Note 4 : VR=1V bias, VRMS=1V, F=1MHz. STATIC PARAMETERS Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VR Continuous Reverse voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) SMTHBT200 3/6 |
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