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SMTHBT200 数据表(PDF) 5 Page - STMicroelectronics |
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SMTHBT200 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 6 page ![]() 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 10 20 30 40 50 60 70 I (A) TSM F=50Hz t(s) Fig 1 : Non repetitive surge peak on-state current versus overload duration (Tj initial = 25 °C). 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 1 10 50 I (A) T Tj=25 °C V (V) T Fig 2 : On-state voltage versus on-state current (typical values). -40 -20 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IH[Tj] / IH[Tj=25 °C] T( °C) j Fig 3 : Relative variation of holding current versus junction temperature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1 10 100 Zth(j-a)( °CW) t (s) p Fig 4 : Variation of thermal impedance junction to ambient versus pulse duration. 1 10 100 300 0.1 0.2 0.5 1.0 C[VR]/C[VR=1V] F=1MHz V (V) R Fig 5 : Relative variation of junction capacitance versus reverse voltage applied (typical values). Note : For VBR upper than 62 V, the curve can be extrapolated (dotted line) SMTHBT200 5/6 |
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