STMPE821 datasheet(49/55 Pages) STMICROELECTRONICS

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STMPE821

Electrical specifications

49/55

Electrical specifications

Table 13.

DC electrical characteristics (-40

−85 °C unless otherwise stated))

Symbol

Parameter

Test condition

Value

Unit

Min

Typ

Max

VCC

Core supply voltage

1.65

−

1.95

VIO

IO supply voltage

1.65

−

5.5

Iactive

Active current

5% touch activity

μA

Iactive

Active current

10% touch activity

μA

Iactive

Active current

100% touch activity

350

550

μA

Isleep

Sleep current

μA

Ihibernate

Hibernate current

μA

VIL

Input voltage low state

(reset/I2C)

VCC = 1.8 V

-0.3 V

0.35 VCC

VIH

Input voltage high state

(reset/I2C)

VCC =1.8 V

0.65VCC

VCC+0.3 V

VIL

Input voltage low state

(GPIO)

VIO =1.8

−5.0 V

-0.3 VIO

0.35 VIO

VIH

Input voltage high state

(GPIO)

VIO =1.8

−5.0 V

0.65 VIO

VIO+0.3 V

VOL

Output voltage low state

(GPIO)

VIO = 1.8 V,

IOL =4mA

-0.3 V

0.25 VIO

VOH

Output voltage high state

(GPIO)

VIO = 1.8 V,

IOL =4mA

0.75 VIO

VIO+0.3 V

VOL

Output voltage low state

(GPIO)

VIO =3.3

−5.0 V,

IOL =8mA

-0.3 V

0.25 VIO

VOH

Output voltage high state

(GPIO)

VIO =3.3

−5.0 V,

IOL =8mA

0.75 VIO

VIO+0.3 V

ILEAKAGE Input leakage current

VIN = 5.5 V,

VIO =5.5 V

All GPIOs

0.05

0.5

μA

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