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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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STLC5464 数据表(PDF) 42 Page - STMicroelectronics |
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STLC5464 数据表(HTML) 42 Page - STMicroelectronics |
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42 / 83 page  VI - MEMORY TIMING T Total Re ad Cycle Tu HZ HZ HZ HZ E ach s ignal from the MHDLC is high impe dance outside this time if MBL = 0 a a a 1/f NDS fr o m µP (or e quivalent) MASTERCLOCK a pplied to XTAL1 P in ADM0/10 NWE NOE DM0/15 from DRAM Circuit Note : Se e MBL De finition a a a NRAS 0/3 Tv NCAS 0/1 Tw Tz Tv/2 Ts Tw + Tz /2 Th Figure 31 : Dynamic Memory Read Signals from the Multi-HDLC VI.1 - Dynamic Memories Symbol Parameter Min. Typ. Max. Unit T Delay between Data Strobe from the mP and beginning of cycle 2/f a Delay between Masterclock and Edge of each signal delivered by the MHDLC (30pF) 20 ns Tw Delay between NCAS Falling Edge and NCAS rising Edge 1/f 2/f ns Tz Delay between NCAS Rising Edge and end of cycle 1/f 2/f ns Ts Set-up Time Data /NCAS Rising Edge 20 ns Th Hold Time Data/NCAS Rising Edge 0 ns STLC5464 42/83 |
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