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STWD100 数据表(PDF) 17 Page - STMicroelectronics |
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STWD100 数据表(HTML) 17 Page - STMicroelectronics |
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17 / 25 page ![]() STWD100 DC and AC parameters 17/25 Table 4. DC and AC characteristics Sym Description Test condition(1) Min Typ Max Unit VCC Operating voltage 2.7 5 5.5 V ICC VCC supply current 13 26 µA ILO Open drain output leakage current from output to the GND or VCC –1 +1 µA Input leakage current (WDI) –1 +1 µA VIH Input high voltage (WDI, EN)0.7 VCC V VIL Input low voltage (WDI, EN)0.3 VCC V VOL Output low voltage (WDO) VCC ≥ 2.7 V, ISINK = 1.2 mA 0.3 V VCC ≥ 4.5 V, ISINK = 3.2 mA 0.4 V VOH Output high voltage (WDO) (push-pull only) VCC ≥ 2.7 V, ISOURCE = 500 µA 0.8 VCC V VCC ≥ 4.5 V, ISOURCE = 800 µA 0.8 VCC V Enable pin ( EN) EN input pulse width 1 µs EN glitch rejection 100 ns EN-to-WDO delay(2) 200 ns EN pull-down resistance 32 63 100 k Ω Watchdog Timer VSTART Timer startup voltage 1.9 2.2 2.7 V tWD Watchdog timeout period STWD100xP 2.3 3.4 4.6 ms STWD100xW 4.3 6.3 8.6 ms STWD100xX 71 102 142 ms STWD100xY 1.12 1.6 2.24 s tPW Watchdog active time 140 210 280 ms WDI-to-WDO delay(3) 150 ns WDI pulse width 1 µs WDI glitch rejection 100 ns 1. Valid for ambient operating temperature: TA = –40 to 125 °C; VCC = 2.7 V to 5.5 V except where noted. 2. WDO will assert for minimum of 10 µs even if EN transitions high. 3. WDO will assert for minimum of 10 µs regardless of transition on WDI (valid for STWD100xP only). |
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