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ESDALC6V1F2 数据表(PDF) 2 Page - STMicroelectronics |
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ESDALC6V1F2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics ESDALC6V1F2 2/7 1 Characteristics Table 2. Absolute maximum ratings (Tamb )= 25° C Symbol Parameter Value Unit VPP ESD discharge IEC 61000-4-2 air discharge IEC 61000-4-2 contact discharge ± 15 ± 8 kV PPP Peak pulse power dissipation (8/20 µs). (1) Tj initial = Tamb 25 W Tj Junction temperature 125 °C Tstg Storage temperature - 55 to +150 °C TL Maximum lead temperature for soldering during 10 s at 5 mm for case 260 °C TOP Operating temperature range - 40 to + 125 °C 1. For a surge greater than the maximum values, the diode will fail in short-circuit Table 3. Thermal resistance Synbol Parameter Value Unit Rth(j-a) Junction to ambient on printed circuit on recommended pad layout 150 °C/W Table 4. Electrical characteristics Symbol Parameter VRM Stand-of voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop Type IRM @ VRM VBR @ IR RD αTC µA max V Vmin Vmax mA Typ 10-4/°C max pFtyp @0 V ESDALC6V1F2 0.5 3 6.1 7.2 1 1 5 12 |
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