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ST6208LD3/OTP 数据表(PDF) 77 Page - STMicroelectronics |
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ST6208LD3/OTP 数据表(HTML) 77 Page - STMicroelectronics |
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77 / 104 page ![]() ST6208C/ST6209C/ST6210C/ST6220C 77/104 10.7 EMC CHARACTERISTICS Susceptibility tests are performed on a sample ba- sis during product characterization. 10.7.1 Functional EMS (Electro Magnetic Susceptibility) Based on a simple running application on the product (toggling 2 LEDs through I/O ports), the product is stressed by two electro magnetic events until a failure occurs (indicated by the LEDs). s ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2 standard. s FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100pF capacitor, until a functional disturbance occurs. This test conforms with the IEC 1000-4- 4 standard. A device reset allows normal operations to be re- sumed. Notes: 1. Data based on characterization results, not tested in production. 2. The suggested 10 µF and 0.1 µF decoupling capacitors on the power supply lines are proposed as a good price vs. EMC performance tradeoff. They have to be put as close as possible to the device power supply pins. Other EMC rec- ommendations are given in other sections (I/Os, RESET, OSCx pin characteristics). Figure 56. EMC Recommended Star Network Power Supply Connection 2) Symbol Parameter Conditions Neg 1) Pos 1) Unit VFESD Voltage limits to be applied on any I/O pin to induce a functional disturbance VDD=5V, TA=+25°C, fOSC=8MHz conforms to IEC 1000-4-2 -2 2 kV VFFTB Fast transient voltage burst limits to be ap- plied through 100pF on VDD and VDD pins to induce a functional disturbance VDD=5V, TA=+25°C, fOSC=8MHz conforms to IEC 1000-4-4 -2.5 3 VDD VSS 0.1 µF 10 µF VDD ST62XX POWER SUPPLY SOURCE ST6 DIGITAL NOISE FILTERING (close to the MCU) 1 |
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