STPC4EEBC datasheet(66/93 Pages) STMICROELECTRONICS

66 / 93 page

DESIGN GUIDELINES

66/93

Release 1.5 - January 29, 2002

6.3.3. SDRAM

The STPC provides all the signals for SDRAM

control. Up to 128 MBytes of main memory are

supported. All Banks must be 64 bits wide. Up to 4

memory banks are available when using 16Mbit

devices. Only up to 2 banks can be connected

when using 64Mbit and 128Mbit components due

to the reallocation of CS2# and CS3# signals. This

is described in Table 6-4 and Table 6-5.

Graphics memory resides at the beginning of

Bank 0. Host memory begins at the top of graphics

memory and extends to the top of populated

SDRAM. Bank 0 must always be populated.

Figure 6-4, Figure 6-5 and Figure 6-6 show some

typical implementations.

The purpose of the serial resistors is to reduce

signal

oscillation

and

EMI

filtering

line

reflections. The capacitance in Figure 6-4 has a

filtering effect too, while it is used for propagation

delay compensation in the 2 other figures.

Figure 6-4. One Memory Bank with 4 Chips (16-bit)

CS0#

BA[1:0]

MA[12:0]

WE#

RAS0#

DQM[7:0]

MCLKI

MCLKO

DQM[7:6]

Reference Knot

CAS0#

MD[63:48]

DQM[5:4]

MD[47:32]

DQM[3:2]

MD[31:16]

DQM[1:0]

MD[15:0]

MD[63:0]

MCLKA

MCLKB

MCLKC

MCLKD

10pF

Length(MCLKI) = Length(MCLKy) with y = {A,B,C,D}

STPC4EEBC 数据表(PDF) 66 Page - STMicroelectronics

STPC4EEBC 数据表(HTML) 66 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93

数据表下载