Analog Integrated Circuit Device Data

Freescale Semiconductor

11

33982

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

POWER OUTPUT TIMING (CONTINUED)

Over-current Low Detection Blanking Time (OCLT[1:0])

00

01

10

11

108

7.0

0.8

0.08

155

10

1.2

0.15

202

13

1.6

0.25

ms

Over-current High Detection Blanking Time

1.0

10

20

μs

CS to CSNS Valid Time(22)

–

–

10

μs

Output Switching Delay Time (OSD[2:0])

000

001

010

011

100

101

110

111

–

52

105

157

210

262

315

367

75

150

225

300

375

450

525

–

95

195

293

390

488

585

683

ms

Watchdog Timeout (WD[1:0])(23)

00

01

10

11

434

207

1750

875

620

310

2500

1250

806

403

3250

1625

ms

SPI INTERFACE CHARACTERISTICS

Recommended Frequency of SPI Operation

–

–

3.0

MHz

Required Low-state Duration for RST(24)

–

50

167

ns

Notes

22.

Time necessary for the CSNS to be within ±5% of the targeted value.

23.

Watchdog timeout delay measured from the rising edge of WAKE to RST from a sleep state condition to output turn-ON with the output

watchdog timeouts.

24.

RST

low duration measured with outputs enabled and going to OFF or disabled condition.

Table 4. Dynamic Electrical Characteristics (continued)

Characteristics noted under conditions 4.5V

Characteristic

Symbol

Min

Typ

Max

Unit