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HAT2210R 数据表(PDF) 7 Page - Renesas Technology Corp

部件名 HAT2210R
功能描述  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
PDF  12 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

HAT2210R 数据表(HTML) 7 Page - Renesas Technology Corp

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HAT2210R, HAT2210RJ
Rev.3.00, Mar.15.2005, page 7 of 11
• MOS2 & Schottky Barrier Diode
4.0
3.0
2.0
1.0
0
50
100
150
200
100
10
1
110
100
20
10
05
10
20
10
0
24
68
10
0.1
1000
VGS = 2.4 V
Tc = 75
°C
25
°C
−25°C
Ambient Temperature
Ta (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage VDS
(V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS
(V)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
2.8 V
3.0 V
2.6 V
4.5 V
10 V
0.1
0.01
100
µs
1 ms
PW
=
10
ms
(1shot)
Ta = 25
°C
1 shot Pulse
10
µs
Note
5
DC
Opera
tion
(PW
≤ 10
s)
Operation in
this area is
limited by RDS(on)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
200
150
100
50
0
24
6
812
10
0.1
1
10
10
1
ID = 5 A
2 A
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
Pulse Test
1 A
100
100
VGS = 4.5 V
10 V



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