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HAT2210R 数据表(PDF) 9 Page - Renesas Technology Corp |
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HAT2210R 数据表(HTML) 9 Page - Renesas Technology Corp |
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9 / 12 page ![]() HAT2210R, HAT2210RJ Rev.3.00, Mar.15.2005, page 9 of 11 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width 10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse DM P PW T D = PW T θch - f(t) = γs (t) x θch - f θch - f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6 mm) 0 0.4 0.8 1.2 1.6 2.0 20 10 VGS = 0 V, –5 V 5 V Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 10 V 10 8 6 4 2 25 50 75 100 125 150 0 Channel Temperature Tch (°C) Maximum Avalanche Energy vs. Channel Temperature Derating IAP = 8 A VDD = 15 V duty < 0.1 % Rg > 50 Ω |
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