Rev.3.00, Mar.15.2005, page 1 of 11

HAT2210R, HAT2210RJ

Silicon N Channel Power MOS FET with Schottky Barrier Diode

High Speed Power Switching

REJ03G0578-0300

Rev.3.00

Mar.15.2005

Features

• Low on-resistance

• Capable of 4.5 V gate drive

• High density mounting

• Built-in Schottky Barrier Diode

Outline

RENESAS Package code: PRSP0008DD-A

(Package name: SOP-8<FP-8DA>)

1 2

3

4

5

6

7

8

G

D

G

S

MOS1

MOS2 and

Schottky Barrier Diode

2

7

4

3

1, 3

Source

2, 4

Gate

5, 6, 7, 8

Drain

S

DD

1

56

D

8

Absolute Maximum Ratings

(Ta = 25°C)

Ratings

HAT2210R

HAT2210RJ

Item

Symbol

MOS1

MOS2 & SBD

MOS1

MOS2 & SBD

Unit

Drain to source voltage

30

30

30

30

V

Gate to source voltage

±20

±12

±20

±12

V

Drain current

7.5

8.0

7.5

8.0

A

Drain peak current

Note1

60

64

60

64

A

Reverse drain current

7.5

8.0

7.5

8.0

A

Avalanche current

Note 2

—

—

7.5

8.0

A

Avalanche energy

Note 2

—

—

5.62

6.4

mJ

Channel dissipation

Pch

Note3

1.5

1.5

1.5

1.5

W

Channel temperature

Tch

150

150

150

150

Storage temperature

Tstg

–55 to +150

–55 to +150

–55 to +150

–55 to +150

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tch = 25

°C, Rg ≥ 50 Ω

3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW

≤ 10 s