HAT2210R datasheet(3/12 Pages) RENESAS

3 / 12 page

HAT2210R, HAT2210RJ

Rev.3.00, Mar.15.2005, page 3 of 11

• MOS2 & Schottky Barrier Diode

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±12 V, VDS = 0

Zero gate voltage drain current

IDSS

—

VDS = 30 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.4

—

2.5

VDS = 10 V, ID =1 mA

RDS(on)

—

Ω

ID =4 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

Ω

ID = 4 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

ID = 4 A, VDS = 10 V

Note4

Input capacitance

Ciss

—

1330

—

Output capacitance

Coss

—

230

—

Reverse transfer capacitance

Crss

—

VDS = 10 V, VGS = 0,

f = 1MHz

Total gate charge

—

Gate to source charge

Qgs

—

3.8

—

Gate to drain charge

Qgd

—

3.2

—

VDD = 10 V, VGS = 4.5 V,

ID = 8 A

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

3.9

—

VGS = 10 V, ID = 4 A,

VDD

≈ 10 V, RL = 2.5 Ω,

Rg = 4.7

Ω

Schottky Barrier diode forward voltage

—

0.5

—

IF = 3.5 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

IF = 8 A, VGS = 0

diF/ dt = 100 A/

µs

Notes: 4. Pulse test

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