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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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HD6417618A 数据表(PDF) 636 Page - Renesas Technology Corp |
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HD6417618A 数据表(HTML) 636 Page - Renesas Technology Corp |
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636 / 646 page  Rev. 6.00 Jun. 12, 2007 Page 604 of 610 REJ09B0131-0600 Item Page Revision (See Manual for Details) Figure 21.29 Synchronous DRAM Burst Write Bus Cycle (Single Write × 4) (Bank Active Mode: PRE + ACT + WRITE Commands, Different Row Addresses, WTRCD = 0 Cycle, TRWL = 0 Cycle) 572 Amended Tc2 Tc3 Tc4 Tr Tpw Tp Tc1 tAD1 tAD1 tAD1 tAD1 CKIO A25 to A0 Row address tAD1 tAD1 Column address Column address Column address Column address Figure 21.30 Synchronous DRAM Auto-Refreshing Timing (WTRP = 1 Cycle, WTRC = 3 Cycles) 573 Amended Trc Trc Trr Tap Tp Trc tAD1 tAD1 CKIO A25 to A0 Figure 21.31 Synchronous DRAM Self-Refreshing Timing (WTRP = 1 Cycle) 574 Amended Trc Trc Trc Trc Trr Tap Tp Trc tAD1 tAD1 CKIO A25 to A0 Figure 21.32 Synchronous DRAM Mode Register Write Timing (WTRP = 1 Cycle) 575 Amended Trc Trc Trc Tmw Tde Trr Trr Tap Tp Trc tAD1 tAD1 tAD1 PALL REF REF MRS CKIO A25 to A0 |
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