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TS5070FN 数据表(PDF) 17 Page - STMicroelectronics |
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TS5070FN 数据表(HTML) 17 Page - STMicroelectronics |
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17 / 32 page ![]() ELECTRICAL OPERATING CHARACTERISTICS Unless otherwise noted, limits in BOLD characters are guaranteed for VCC =+ 5 V ± 5% ; VSS =– 5 V ± 5%. TA = -40 °Cto85 °C by correlation with 100% electrical testing at TA =25 °C. All other limits are assured by correlation with other production tests and/or product design and characterisation. All signals referenced to GND. Typicals specified at VCC = + 5 V, VSS = − 5V, TA =25 °C. DIGITAL INTERFACE Symbol Parameter Min. Typ. Max. Unit VIL Input Low Voltage All Digital Inputs (DC measurement) 0.7 V VIH Input High Voltage All Digital Inputs (DC measurement) 2.0 V VOL Output Low Voltage DX0 and DX1, TSX0, TSX1 and CO, IL = 3.2mA All Other Digital Outputs, IL = 1mA 0.4 V VOH Output High Voltage DX0 and DX1 and CO, IL = -3.2mA All other digital outputs except TSX,IL = -1mA All Digital Outputs, IL = -100 µA 2.4 VCC-0.5 V V IIL Input Low Current all Digital Inputs (GND < VIN <VIL) -10 10 µA IIH Input High Current all Digital Inputs Except MR (VIH <VIN <VCC) -10 10 µA IIH Input High Current on MR -10 100 µA IOZ Output Current in High Impedance State (TRI-STATE) DX0 and DX1, CO and CI/O (as an input) IL5-IL0 as inputs (GND < VO <VCC) -10 10 µA ANALOG INTERFACE Symbol Parameter Min. Typ. Max. Unit IVFXI Input Current VFXI (-3.3V < VFXI < 3.3V) -10 10 µA RVFXI Input Resistance VFXI (-3.3V < VFXI < 3.3V) 390 620 k Ω VOSX Input offset voltage at VFXI 0dBm0 = -19dBm 0dBm0 = +6.4dBm 10 200 mV mV RLVFRO Load Resistance at VFRO 0dBm0 = 8.1dBm 0dBm0 = 7.6dBm 0dBm0 = 6.9dBm 15 600 300 k Ω Ω Ω CLVFRO Load Capacitance CLVFRO from VFRO to GND 200 pF ROVFRO Output Resistance VFRO (steady zero PCM code applied to DR0 or DR1) 13 Ω VOSR Output Offset Voltage at VFRO (alternating ±zero PCM code applied to DR0or DR1, 0dBm0 = 8.1dBm) -200 200 mV TS5070 - TS5071 17/32 |
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